Method for preparing coarse-crystal or single-crystal metal film

Details Method for preparing coarse-crystal or single-crystal metal film Method for preparing coarse-crystal or single-crystal metal film

1980-06-09

1982-04-20

Beck, Shrive P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

427250, 427295, 427299, 4273767, 4273831, 4273833, 204192M, 204192C, C30B 2306

Patent

active

043257763

ABSTRACT:
For preparing coarse-crystal or single-crystal metal films by vapor-depositing or atomizing a metal on a substrate, an amorphous layer of Ta, W, Cu, Co, Al or an aluminum alloy or a Ti-V alloy with a vanadium content of more than about 70 atom percent is first precipitated on the substrate which is cooled to a temperature below about -90.degree. C. Subsequently, the amorphous layer is recrystallized by heating the substrate with the deposited metal layer to at least room temperature and maximally 300.degree. C. The so-prepared metal films have particular application to integrated circuits.

REFERENCES:
patent: 3036933 (1962-05-01), Caswell
Keith, An X-ray Study in High Vac. of Structure of Evap. Copper Films, Proc. Phys. Soc., 69-B, 180 (1956).
Powell et al., Vapor Deposition, John Wiley & Sons, Inc., N.Y. 1966.

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