Semiconductor device having channel stopper portions integrally

Details Semiconductor device having channel stopper portions integrally Semiconductor device having channel stopper portions integrally

1998-02-25

2000-08-29

Hardy, David

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257398, H07L 3106

Patent

active

06111295&

ABSTRACT:
The work surface of a p-type silicon substrate has a section where an E type MOSFET is formed, and a section where an I type MOSFET having a threshold voltage of about 0.1V is formed. The MOSFET is formed using a p-type well layer having a resistivity lower than that of the ground of the silicon substrate. The well layer includes deep and shallow portions which are integrally formed and have the same resistivity. The deep well portion defines an element area for forming the MOSFET, whereas the shallow well portions are arranged immediately below element isolation films surrounding the I type MOSFET, and function as channel stoppers.

REFERENCES:
patent: 4859619 (1989-08-01), Wu et al.
patent: 5196367 (1993-03-01), Lu et al.
patent: 5751047 (1998-05-01), Ogura

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