Dual damascene process using selective W CVD

Details Dual damascene process using selective W CVD Dual damascene process using selective W CVD

1998-06-08

2000-08-29

Nelms, David

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438672, 438706, 438742, 257762, 257768, 257769, H01L 2144

Patent

active

06110826&

ABSTRACT:
A dual damascene process using selective tungsten chemical vapor deposition is provided for forming composite structures for local interconnects comprising line trenches with contact holes, and composite structures for intermetal interconnects comprising line trenches with via holes. It is shown that by forming a seed layer in judiciously selected portions of the dual damascene structure and depositing tungsten selectively in one step, contact holes and via holes can be formed free of voids and key-holes.

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