Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-03-13
2000-08-29
Thomas, Tom
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438673, 438701, 257758, 257773, H01L 21461, H01L 214763, H01L 23485
Patent
active
061108243
ABSTRACT:
Capacitive coupling, and attendant cross-talk, is reduced by increasing the distance between wire surfaces in integrated circuit applications. This is done by changing wire shape from the conventional rectangular cross-section. A cross-section which consists of a rectangular portion and a shaped, triangular portion is created, having the effect of increasing the effective distance between adjacent conductors. Cross-sectional area of wires is maintained and thus the current carrying capacity is maintained. The wire shapes may be produced using several alternate methods.
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Licata Thomas John
Mandelman Jack Allan
Abate, Esq. Joseph P.
International Business Machines - Corporation
Souw Bernard E.
Thomas Tom
LandOfFree
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