Channel stop implant profile shaping scheme for field isolation

Details Channel stop implant profile shaping scheme for field isolation Channel stop implant profile shaping scheme for field isolation

1997-01-21

1999-01-19

Fourson, George

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Recessed oxide by localized oxidation

438981, H01L 2176

Patent

active

058613382

ABSTRACT:
The present invention is a semiconductor device and a method of providing such a semiconductor device which allows a high junction breakdown voltage and a high field turn on voltage, while allowing the field oxide thickness to be limited and being independent of a misalignment of the mask. A method in accordance with the present invention for providing a semiconductor device including a field oxide, the field oxide including a field oxide boundary wherein the field oxide is located within the boundary, the method comprising the step of implanting a first implant area into the substrate, including areas proximate indistance to a junction area, the first area being implanted with a first implant concentration and implanting a second implant area distal to the junction area, the second implant area being implanted with a second implant concentration, wherein the depth of the implant is controlled by the energy level, wherein the implant of the second implant area is independent of a misalignment of a mask.

REFERENCES:
patent: 4994407 (1991-02-01), Custode et al.
patent: 5358890 (1994-10-01), Sivan et al.
patent: 5372951 (1994-12-01), Anjum et al.
patent: 5679602 (1997-10-01), Lin et al.

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