Etching method and apparatus

Details Etching method and apparatus Etching method and apparatus

1996-07-29

1999-01-19

Chang, Ceila

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

216 63, 438734, 204192, H01L 2100

Patent

active

058611037

ABSTRACT:
Each of a pair of electrodes is provided in high-frequency power supply. A sample placed on the one of electrodes is etched by RIE (reactive ion etching) method. At the time, the power supply connected to the other electrode opposite to the sample is actuated first, and then the power supply of the one electrode on which the sample has been placed is actuated. And then the power supply connected to the other electrode is stopped. Therefore a bias voltage applied to the sample is gradually varied to suppress the abrupt application of a voltage to the sample.

REFERENCES:
patent: 4496448 (1985-01-01), Tai
patent: 4810322 (1989-03-01), Gut
patent: 4950377 (1990-08-01), Huebner
patent: 5259922 (1993-11-01), Yamano
patent: 5681419 (1997-10-01), Yoon

Affiliated with

Also associated with

Rating

Etching method and apparatus does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Etching method and apparatus, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Etching method and apparatus will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1244506