Method of fabricating DRAM cell capacitor

Details Method of fabricating DRAM cell capacitor Method of fabricating DRAM cell capacitor

1994-11-14

1996-10-15

Arbes, Carl J.

Metal working

Method of mechanical manufacture

Electrical device making

257301, 257302, 437 52, H01L 2170

Patent

active

055641806

ABSTRACT:
A new capacitor configuration and its method of manufacture. The capacitor, which may be used with DRAM cells, is made on a substrate having a gate electrode, source/drain areas, and a first insulating layer containing a first contact opening formed therein. A first conducting layer is formed overlying the insulating layer and connected to the source/drain areas through the first contact opening. Next, the steps are performed repeatedly as follows. A first dielectric layer, a second conducting layer, a second dielectric layer, and a third conducting layer are sequentially formed overlying the first conducting layer and the first insulating layer. Portions of the third conducting layer, the second dielectric layer, and the second conducting layer are etched to form a second contact opening. Sidewall spacers are formed on the side walls of the second contact opening. A fourth conducting layer is formed overlying the third conducting layer and connected to the first conducting layer through the second contact opening. The fourth conducting layer and the third conducting layer are patterned by etching to define the periphery of capacitor. The first, third, and fourth conducting layers define a first electrode plate while the second conducting layer defines a second electrode plate. The electrode plate surface area of a capacitor can be increased resulting in a higher capacitance.

REFERENCES:
patent: 4845539 (1989-07-01), Inoue
patent: 5066608 (1991-11-01), Kim et al.
patent: 5273925 (1993-12-01), Yamanaka
patent: 5362665 (1994-11-01), Lu
patent: 5396456 (1995-03-01), Liu et al.
patent: 5399520 (1995-03-01), Jang
patent: 5416037 (1995-05-01), Sato et al.
patent: 5429977 (1995-07-01), Lu et al.

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