Sense amplifier of semiconductor memory having an increased read

Details Sense amplifier of semiconductor memory having an increased read Sense amplifier of semiconductor memory having an increased read

1996-02-09

1997-11-11

Nelms, David C.

Static information storage and retrieval

Read/write circuit

Flip-flop used for sensing

365207, 327 51, 327 52, G11C 700

Patent

active

056871279

ABSTRACT:
A semiconductor memory includes one pair of signal lines, and a plurality of memory cells connected to the plurality of word lines, respectively, and also connected to the one pair of signal lines in such a manner that when one of the plurality of word lines is activated, a potential difference corresponding to a content stored in the memory cell connected to the activated word line appears between the one pair of signal lines. A sense amplifier has a differential amplifier connected to the one pair of signal lines to output a signal in accordance with the potential difference appearing between the one pair of signal lines, and a feedback circuit composed of a flipflop for amplifying the potential difference appearing between the one pair of signal lines.

REFERENCES:
patent: 5297080 (1994-03-01), Yamamoto
patent: 5343428 (1994-08-01), Pilo et al.
patent: 5440506 (1995-08-01), Longway et al.
N. Tamba et al., "A 1.5ns 256kb BiCMOS SRAM with 11k 60ps Logic Gates", 1993 IEEE International Solid-State Circuits Conference, pp. 246-247.

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