Plasma processing apparatus and method

Details Plasma processing apparatus and method Plasma processing apparatus and method

1995-12-01

1997-11-11

Powell, William

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

216 67, H01L 2100

Patent

active

056859422

ABSTRACT:
A plasma processing apparatus comprises a chamber for storing an object, a gas supply unit for supplying processing gas into the chamber, and high-frequency antenna, provided at least either the inside or outside of the chamber to oppose the object, for generating processing gas supplied into the chamber for processing the object, a high-frequency power source for supplying high-frequency power to the high-frequency antenna, and an electrode, provided to oppose the object and to be insulated from the high-frequency antenna and set at a reference potential, for providing a uniform electric field above the object.

REFERENCES:
patent: 5540800 (1996-07-01), Qian
patent: 5556501 (1996-09-01), Collins et al.
patent: 5571366 (1996-11-01), Ishii et al.

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