Memory cell with transfer device node in selective polysilicon

Details Memory cell with transfer device node in selective polysilicon Memory cell with transfer device node in selective polysilicon

1997-10-16

1999-11-23

Tran, Minh Loan

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257306, 257296, H01L 27108, H01L 2976, H01L 2994

Patent

active

059905115

ABSTRACT:
A memory cell is constructed with one electrode of the transfer device extending over a trench capacitor, saving about 6.5% of cell area. Selective polysilicon for a strap seeded from the trench is grown in the same step in which selective single crystal silicon seeded from the substrate is grown for the transfer device. At least a portion of the node diffusion is located in single crystal epitaxial silicon extending over the trench. The process eliminates the need for a separate strap masking step.

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