Method for manufacturing polysilicon with relatively small line

Details Method for manufacturing polysilicon with relatively small line Method for manufacturing polysilicon with relatively small line

1997-12-16

1999-03-30

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438684, 438948, 438949, H01L 2144

Patent

active

058889043

ABSTRACT:
A method is provided for manufacturing a polysilicon with a relatively small line width. The method includes steps of: a) forming a first layer of photoresist with a line pattern having a first line interval and a first line width over the polysilicon; b) etching a portion of the polysilicon for forming the polysilicon with a second line interval x and a second line width y respectively equal to the first line interval and the first line width; c) forming a second layer of photoresist with a third line interval and a third line width over the polysilicon; d) etching another portion of the polysilicon for forming the polysilicon with a fourth line interval x`, equal to the third line interval, and a fourth line width y`; e) depositing a polysilicon film over the polysilicon with the relatively small line width; and f) etching a portion of the polysilicon film to form sidewalls of the polysilicon with the relatively small line width for adjusting the relatively small line width of the polysilicon.

REFERENCES:
patent: 5213992 (1993-05-01), Lu
patent: 5512500 (1996-04-01), Oyamatsu
patent: 5523258 (1996-06-01), Petti et al.
patent: 5525534 (1996-06-01), Ikemasu et al.
patent: 5789300 (1998-08-01), Fulford, Jr.

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