Semiconductor device and fabrication method thereof

Details Semiconductor device and fabrication method thereof Semiconductor device and fabrication method thereof

Filed on

1997-01-16

Date issued

1999-03-30

Examiner

Niebling, John F.

Patent Class

Semiconductor device manufacturing: process

SubClass

Making field effect device having pair of active regions...

SubSubClass

On insulating substrate or layer

Other Related Categories

438467, H01L 2100, H01L 21326

Type

Patent

Status

active

Patent number

058888586

Description

ABSTRACT:
Concentration of metal element which promotes crystallization of silicon and which exists within a crystal silicon film obtained by utilizing the metal element is reduced. A first heat treatment for crystallization is implemented after introducing nickel to an amorphous silicon film. Then, after obtaining the crystal silicon film, another heat treatment is implemented within an oxidizing atmosphere at a temperature higher than that of the previous heat treatment. A thermal oxide film is formed in this step. At this time, gettering of the nickel element into the thermal oxide film takes place. Then, the thermal oxide film is removed. Thereby, a crystal silicon film having low concentration of the metal element and a high crystalinity can be obtained.

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