Process for working up the residual gases obtained in the deposi

Details Process for working up the residual gases obtained in the deposi Process for working up the residual gases obtained in the deposi

1982-08-04

1984-06-12

Nozick, Bernard

Chemistry of inorganic compounds

Silicon or compound thereof

Elemental silicon

55 71, 62 32, 423240, C01B 3302

Patent

active

044541040

ABSTRACT:
The chlorosilanes contained in the residual gases obtained in the deposit of silicon and in the conversion of silicon tetrachloride are first condensed out in liquid form. The hydrogen chloride present in the residual gases is dissolved in the condensed silicon tetrachloride. The remaining, virtually pure hydrogen is passed back into the process. During the distillation of the condensate, the dissolved hydrogen chloride is removed and can be separated off and reused. The trichlorosilane obtained after the distillation and the silicon tetrachloride can also be reused in the deposition process or the conversion process, respectively.

REFERENCES:
patent: 1520627 (1924-12-01), Youker
patent: 3091517 (1963-05-01), Short et al.
patent: 3286442 (1966-11-01), Wylegla
patent: 3490203 (1970-01-01), Kloepfer et al.
patent: 3500613 (1970-03-01), Kloepfer et al.
patent: 4213937 (1980-07-01), Padovani et al.
patent: 4340574 (1982-07-01), Coleman

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