Semiconductor device having a silicon-on-insulator structure

Details Semiconductor device having a silicon-on-insulator structure Semiconductor device having a silicon-on-insulator structure

1996-09-26

1998-07-07

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257506, 257507, 257720, H01L 2702

Patent

active

057773653

ABSTRACT:
A semiconductor device of SOI structure exhibits a excellent heat-radiating characteristic while assuring breakdown-voltage and element-isolating performance. A buried silicon oxide film having a thickness required by the breakdown-voltage of a semiconductor element is buried between a SOI layer and a silicon substrate. A SOI layer is divided into island silicon regions by a groove for electrical-isolation use, and the groove is filled with dielectric such as an oxide film and polycrystalline silicon. In an island silicon region, a LDMOS transistor having high breakdown voltage may be formed as the semiconductor element, and potential distribution is created in accordance with a voltage application to the semiconductor element. The buried silicon oxide film at a region where low electric potential is distributed, for example a region below a grounded well region of the LDMOS transistor, is made thin. Through the thin portion of the buried silicon oxide film, heat generated by the operation of the semiconductor element can easily be propagated to the silicon substrate and radiated.

REFERENCES:
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patent: 5072287 (1991-12-01), Nakagawa et al.
patent: 5442223 (1995-08-01), Fujii
patent: 5525824 (1996-06-01), Himi et al.
patent: 5536961 (1996-07-01), Nakagawa et al.
patent: 5650354 (1997-07-01), Himi et al.
The Effect of Temperature on Lateral DMOS Transistors in a Power IC Technology. IEEE Trans. On Electron Devices, vol. 4, Apr. 1992, pp. 990-1005.
"Measurement and Modeling of Self-Heating in SOI NMOSFET'S," IEEE Trans. On Electron Devices, vol. 41, No. 1, Jan. 1994, pp. 69-75.

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