Poly(N-benzyl acrylamide) polymer containing negative photoresis

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Radiation sensitive composition or product or process of making

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430271, 430311, 430319, 526305, G03C 171, G03C 516, G03C 176

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045699011

ABSTRACT:
Negative photoresist materials are provided that are sensitive in the deep ultraviolet (UV) light range of about 200 nm-300 nm. These materials permit higher resolution then those sensitive to longer wavelengths and thus a higher information density in the microcircuits manufactured using them. This sensitivity in the deep UV is obtained without loss of the other normal attributes of a resist material: good adhesion to substrates, good contrast in images formed, and good etch resistance properties.
The polymeric negative photoresist molecules are the homopolymers of N-benzyl acrylamide and its analogues of the general structure ##STR1## where R=alkyl, aryl, halogen, or nitrogen, and copolymers thereof with at least one vinylidene monomer of the general formula ##STR2## wherein R.sub.2 and R.sub.3 are substituents selected from the group consisting of halogen or an alkyl group, aryl, substituted aryl, carboxylic acid, lower alkyl carboxylate, lower alkyl, lower alkenyl, hydrogen, halogen, nitrile, lower acyloxy, lower alkoxy or amido, the relative proportions being chosen so as to produce a solid copolymer containing at least 0.1 weight percent of said N-benzyl acrylamide monomer.

REFERENCES:
patent: 2732358 (1956-01-01), Jones
patent: 4121936 (1978-10-01), Matsuda et al.
Chester L. Parris and Roger M. Christenson, "N-Alkylation of Nitriles with Benzyl Alcohol Related Alcohols and Glycols", Journal of Organic Chemistry vol. 25, pp. 331-334, Mar. 1960.

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