Liquid encapsulated crystal growth

Details Liquid encapsulated crystal growth Liquid encapsulated crystal growth

1987-03-19

1989-04-25

Dixon, Jr., William R.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566202, 156DIG88, 156DIG82, 156DIG72, 156DIG92, C03B 1502

Patent

active

048245208

ABSTRACT:
Low-defect crystals are grown in a closed ampoule under a layer of encapsulant. After crystal growth, the crystal is separated from the melt and moved into the layer of encapsulant and cooled to a first temperature at which crystal growth stops. The crystal is then moved into the inert gas ambient in the ampoule and further cooled. The crystal can be separated from the melt by decanting the melt into an adjacent reservoir or by rotating the ampoule to rotate the crystal into the encapsulant layer.

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patent: 3463680 (1969-08-01), Melngailis et al.
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patent: 3741817 (1973-06-01), Bienert et al.
patent: 3811963 (1974-05-01), Hawrylo et al.
patent: 4303464 (1981-12-01), Suzuki et al.
patent: 4431476 (1984-02-01), Watanae et al.
patent: 4478675 (1984-10-01), Akai

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