Sense amplifier for nonvolatile semiconductor memory device

Details Sense amplifier for nonvolatile semiconductor memory device Sense amplifier for nonvolatile semiconductor memory device

1996-07-15

1998-08-04

Nelms, David C.

Static information storage and retrieval

Floating gate

Particular biasing

36518904, 365205, G11C 700

Patent

active

057904588

ABSTRACT:
A sense amplifier for transferring data between a data input/output line and a bit line in a nonvolatile semiconductor memory device includes two isolated current paths to prevent data collisions. A transistor transfers a bit of input data from the data input/output line to a first terminal of a two-terminal latch in response to a load control signal. The second terminal of the latch is connected to the bit line. A second transistor transfers a bit of output data from the second terminal of the latch to the data input/output line in response to a read control signal. While the bit of input data is being transferred, the second transistor isolates the second terminal of the latch from the data input/output line.

REFERENCES:
patent: 4739499 (1988-04-01), Simpson
patent: 4804871 (1989-02-01), Walters, Jr.
patent: 5311471 (1994-05-01), Matsumoto et al.
patent: 5361227 (1994-11-01), Tanaka et al.
patent: 5381363 (1995-01-01), Bazes
patent: 5491667 (1996-02-01), Sharp
Article: A Novel Sense Amplifier for Flexible Voltage Operation NAND Flash Memories, 1995 Symposium on VLSI Circuits Digest of Technical Papers, by Hiroshi Nakamura, Junichi Miyamoto, Kenichi Imamiya and Yoshihisa Iwata, pp. 71-72.

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