Method of making an interconnect structure employing equivalent

Details Method of making an interconnect structure employing equivalent Method of making an interconnect structure employing equivalent

1999-04-19

1999-10-05

Niebling, John F.

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438669, 438468, 438927, 438957, 438128, 438761, 438385, 438598, 438622, 257773, 257775, 257774, 257536, H01L 2144, H01L 21326, H01L 2182, H01L 2348

Patent

active

059638311

ABSTRACT:
A method of fabricating an interconnect structure having improved electromigration resistance. Two conductive lines are formed over a substrate and isolated by a dielectric layer. A contact/via array including a plurality of row contact/vias and column contact/vias are formed within the dielectric layer and electrically connect to the two conductive lines. The load resistors are respectively inserted into the two conductive lines close to the contact/via array. The load resistors are parallel to each other and disposed to its corresponding contact/via array. The load resistors having various resistances are formed by a plurality of slots with various lengths, which are filled with dielectrics. Accordingly, the current paths from one conductive line to the other conductive line through the contact/vias and the load resistors corresponding to the two conductive lines have identical equivalent resistance.

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patent: 5739587 (1998-04-01), Sato
patent: 5789587 (1998-04-01), Sato
patent: 5789783 (1998-08-01), Choundhury et al.

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