Method of forming silicide film

Details Method of forming silicide film Method of forming silicide film

1996-03-15

1999-10-05

Dutton, Brian

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438655, 438683, H01L 214763, H01L 2144

Patent

active

059638290

ABSTRACT:
A method of forming a silicide film composed of refractory metal in a certain region of a semiconductor device to be formed on a semiconductor substrate, includes the steps of (a) depositing a thin film composed of refractory metal on both a semiconductor substrate and a semiconductor device, (b) carrying out a first thermal annealing to the semiconductor substrate, semiconductor device, and refractory metal in depressurized or diluted gas atmosphere including nitrogen therein, and (c) carrying out a second thermal annealing to the semiconductor substrate, semiconductor device and refractory metal in argon gas atmosphere or high vacuum atmosphere. It is preferable that the second thermal annealing be carried out at higher temperature than the first thermal annealing. The method makes it possible to reduce a resistance of the silicide layer, and selectively form the silicide layer only on a gate electrode and a diffusion layer. In addition, the method completely avoids leak current from flowing between a gate electrode and source/drain regions of a MOS transistor.

REFERENCES:
patent: 4545116 (1985-10-01), Lau
patent: 4822753 (1989-04-01), Pintchovski et al.
patent: 4855798 (1989-08-01), Imamura et al.
patent: 5236868 (1993-08-01), Nulman
patent: 5449631 (1995-09-01), Giewont et al.
patent: 5646070 (1997-07-01), Chung
patent: 5665646 (1997-09-01), Kitano
patent: 5721175 (1998-02-01), Kunishima et al.
Mallardeau et al, "Characterization of TiSi2 Ohmic and Schottky Contacts Formed by Rapid Thermal Annealing Technology", J. Electrochem. Soc., vol. 136, No. 1, pp. 238-241, Jan. 1989.

Affiliated with

Also associated with

Rating

Method of forming silicide film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming silicide film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming silicide film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1182675