Semiconductor device having a conductive layer with an aperture

Details Semiconductor device having a conductive layer with an aperture Semiconductor device having a conductive layer with an aperture

1994-10-26

1996-12-24

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257 48, 257773, 257776, 259310, H01L 2348, H01L 2352

Patent

active

055876102

ABSTRACT:
A semiconductor device is constituted by a semiconductor substrate of a first conductivity type. An associated circuit element has a first electrode, a second electrode, and an impurity diffusion region of a second conductivity type formed in the semiconductor substrate and connected to the second electrode. An insulating layer is formed to cover the circuit element, and a conductive layer is formed on the insulating layer to cover the circuit element and thereby conceals the first and second electrodes and the impurity diffusion region of the circuit element. An aperture is selectively formed in the conductive layer such that respective parts of the first and second electrodes and the impurity diffusion region are exposed through the aperture, enabling transmission of electrons through the aperture and facilitating testing by an electron beam tester.

REFERENCES:
patent: 4577147 (1986-03-01), Frosien et al.
patent: 4733075 (1988-03-01), Sato
patent: 5067006 (1991-11-01), Shiga
patent: 5145800 (1992-09-01), Arai et al.
patent: 5194932 (1993-03-01), Kurisu
Patent Abstracts of Japan, vol. 016, No. 459, 24 Sep. 1992.
Patent Abstracts of Japan, vol. 016, No. 291, 26 Jun. 1992.

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