Test piece for X-ray inspection

Active solid-state devices (e.g. – transistors – solid-state diode – Test or calibration structure

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Details

257384, 257757, 257770, H01L 2358

Patent

active

055875904

ABSTRACT:
The invention provides a test piece of a thin film shaped material to be inspected for inspecting crystal structure thereof with an X-ray diffraction process. A width of the test piece is smaller than a diameter of a particle of phase transition material having phase-transited, and the test piece of a thin film-shaped material to be inspected is surrounded by an insulator, dielectric or oxide film. The test piece enables inspection of a crystal structure of thin film metal silicide by means of an X-ray diffraction process without lowering a diffraction intensity of the X-rays.

REFERENCES:
"Modeling of agglomeration in polycrystalline thin films: Application to TiSi.sub.2 on a silicon substrate" by Nolen et al., J. Appl. Phys., vol. 71, No. 2, Jan. 15, 1992, pp. 720-724.
"Morphology and phase stability of TiSi.sub.2 on Si" by Jeon et al., J. Appl. Phys. 71, (9), May 1, 1992, pp. 4269-4276.

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