Crystalline layer growth method

Details Crystalline layer growth method Crystalline layer growth method

1978-06-15

1981-01-27

Garris, Bradley R.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156622, 156624, 156DIG65, B01D 900, C30B 1500

Patent

active

042473608

ABSTRACT:
A magnetic epitaxial layer containing the rare earths yttrium and samarium is grown on a gadolinium-gallium substrate which moves vertically in the melt during the growth process. The substrate remains immersed in a melt containing oxides of iron and the rare earths and while moving vertically in its own plane the substrate effectuates a translation movement with each point of the substrate describing a canted 8-shaped loop.

REFERENCES:
patent: 2651566 (1953-09-01), Warner et al.
patent: 2686712 (1954-08-01), Estes
patent: 3228753 (1966-01-01), Larsen
patent: 3615262 (1971-10-01), Kappelmeyer et al.
"New Method of Stirring for LPE Growth"; J. of Crystal Growth; vol. 31, No. 1 (1975); pp. 375-379.

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