Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-10-27
1998-08-04
Meier, Stephen
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257370, H01L 2976, H01L 31062, H01L 31113, H01L 31119
Patent
active
057897905
ABSTRACT:
A semiconductor device has a transistor made of a semiconductor which has a source and drain regions, a channel region, a gate insulative film, and a gate electrode. The gate electrode is connected to a part of the channel region. The channel region has the same conductivity type as that of the source and drain regions and has an impurity concentration lower than that of the source and drain regions.
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Koizumi Toru
Morishita Masakazu
Sugawa Shigetoshi
Canon Kabushiki Kaisha
Meier Stephen
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