Semiconductor device

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257370, H01L 2976, H01L 31062, H01L 31113, H01L 31119

Patent

active

057897905

ABSTRACT:
A semiconductor device has a transistor made of a semiconductor which has a source and drain regions, a channel region, a gate insulative film, and a gate electrode. The gate electrode is connected to a part of the channel region. The channel region has the same conductivity type as that of the source and drain regions and has an impurity concentration lower than that of the source and drain regions.

REFERENCES:
patent: 4314267 (1982-02-01), Bergeron et al.
patent: 4609931 (1986-09-01), Koike
patent: 4612629 (1986-09-01), Harari
patent: 4672416 (1987-06-01), Nakazato et al.
patent: 4830973 (1989-05-01), Mastroianni
patent: 4939563 (1990-07-01), Fang et al.
patent: 4947192 (1990-08-01), Hawkins et al.
patent: 5034782 (1991-07-01), Koizumi et al.
patent: 5040041 (1991-08-01), Yamada et al.
patent: 5075250 (1991-12-01), Hawkins et al.
patent: 5140400 (1992-08-01), Morishita
patent: 5177584 (1993-01-01), Uchida et al.
patent: 5412240 (1995-05-01), Inoue et al.
patent: 5434441 (1995-07-01), Inoue et al.
Muller et al, Device Electronics for IC's, pp. 354-356, 448, .COPYRGT. 1986.
Patent abstracts of Japn, vol. 11, No. 320 (E-550) 17 Oct. 1987 & JP-A-62 110 332 (Citizen Watch).
Patent abstracts of Japan, vol. 6, No. 67 (E-104) 28 Apr. 1982 & JP-A-57 010 267 (Fujitsu).
S. Verdonckt-Vanderbroek et al., "High -Gain Lateral Bipolar Action in a MOSFET Structure," IEEE Transactions of Electron Devices, vol. 38, No. 11, pp. 2487-2496 (Nov. 1991).

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