Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1997-06-30
1999-10-05
Yoo, Do Hyun
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
365202, 365203, 365207, 365210, G11C 700
Patent
active
059634847
ABSTRACT:
Disclosed is a single-ended bit line structure of latched type, capable of sensing data at a high speed. The present invention decreasing the power consumption, by selectively separating the single-ended sense amplifier from the bit line and the reference voltage generator through the PMOS transistors at the same time the sensing operation starts. The single-ended bit line structure according to the present invention includes a reference voltage generator for generating a constant voltage, a latched-type sense amplifier and a switching unit for separating the latched-type sense amplifier from the reference voltage generator and a bit line at the same time the latched-type sense amplifier is enabled.
REFERENCES:
patent: 4669063 (1987-05-01), Kirsch
patent: 5608668 (1997-03-01), Zagar et al.
Hyundai Electronics Industries Co,. Ltd.
Yoo Do Hyun
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