Silicon on Insulator semiconductor device with increased withsta

Details Silicon on Insulator semiconductor device with increased withsta Silicon on Insulator semiconductor device with increased withsta

1995-09-11

2000-04-11

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257104, 257162, 257343, 257487, 257603, 257656, H01L 2701, H01L 29861, H01L 2974, H01L 31075

Patent

active

060491094

ABSTRACT:
A power semiconductor device according to the present invention has an SOI substrate formed of a buried silicon oxide film having an uneven surface portion on the surface thereof and an n-type silicon active layer of low impurity concentration formed on the buried silicon oxide film. An n-type emitter layer and a p-type emitter layer are selectively formed in the surface area of the n-type silicon active layer. A cathode electrode and an anode electrode are respectively formed on the n-type emitter layer and p-type emitter layer. With the above structure, a power semiconductor device of high withstand voltage can be realized.

REFERENCES:
patent: 5343067 (1994-08-01), Nakagawa et al.
IEEE Transactions on Electron Devices "Breakdown Voltage Enhancement for Devices on Thin Silicon Layer/Silicon Dioxide Film", vol. 38, No. 7, Nakagawa, et al. Jul., 1991, pp. 1650-1654.
IEEE Electron Device Letters, vol. 15, No. 5, pp. 148-150, May 1994, I. J. Kim, et al., "Breakdown Voltage Improvement for Thin-Film SOI Power Mosfet's by a Buried Oxide Step Structure".

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