Highly integrated semiconductor memory device and the fabricatio

Details Highly integrated semiconductor memory device and the fabricatio Highly integrated semiconductor memory device and the fabricatio

1991-12-30

1992-11-17

Griffin, Donald

Electricity: electrical systems and devices

Electrostatic capacitors

Fixed capacitor

357 236, 437 52, H01G 406, H01L 2968, H01L 2170

Patent

active

051648814

ABSTRACT:
In a highly integrated semiconductor memory device provided with memory cells in matrix form on a semiconductor substrate, each memory cell includes a transistor and a capacitor. The cell capacitor includes a storage electrode in contact with a source region of the transistor. This storage electrode has a plurality of irregularly shaped quasi-cylindrical holes formed therein at random locations. A dielectric film is coated on the whole surface of the storage electrode. Thus, storage electrodes having a large cell capacitance suitable for DRAM cells of highly integrated circuits can be achieved.

REFERENCES:
patent: 5043780 (1991-08-01), Fazan et al.
patent: 5082797 (1992-01-01), Chan et al.

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