Semiconductor device and manufacturing method for the same

Details Semiconductor device and manufacturing method for the same Semiconductor device and manufacturing method for the same

1998-03-11

2000-04-11

Chang, Joni

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438488, H01L 2120, H01L 2136

Patent

active

060487801

ABSTRACT:
A semiconductor device having an active layer comprising crystalline silicon, said active layer comprising a first layer comprising crystalline silicon formed on an insulating surface and a second layer comprising crystalline silicon formed on said first layer, wherein said first layer contains a metal element at a first concentration while said second layer is free from said metal element or contains said metal element at a second concentration which is lower than said first concentration.

REFERENCES:
patent: 5403772 (1995-04-01), Zhang et al.
patent: 5639698 (1997-06-01), Yamazaki et al.

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