Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-09-04
1992-11-17
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
365104, 257758, 257530, H01L 2348, H01L 2710, H01L 2702, H01L 2904
Patent
active
051648148
ABSTRACT:
A semiconductor device has a semiconductor substrate, MOS transistors formed in the semiconductor substrate, a wiring pattern formed on the semiconductor substrate, for wiring the MOS transistors, and a passivation layer covering the wiring pattern. In the semiconductor device, the wiring pattern includes a plurality of connecting sections each selectively set to a conductive state by conductive material filled in an opening formed in the insulating layer.
REFERENCES:
patent: 4673966 (1987-06-01), Shimoyama
Hille Rolf
Kabushiki Kaisha Toshiba
Limanek Robert
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