Process for producing single-crystal ceramics

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156603, C30B 102

Patent

active

049003933

ABSTRACT:
The invention provides a process for causing growth of single crystal from the junction of a single crystal/polycrystal joined body by a low-temperature heat treatment by making use of the solid-phase growth of crystal. The growth of single crystal can be accomplished staby, with high reliability and in a solid phase by producing a stage satisfies the conditions for abnormal grain growth only at the portion close to the junction, that is, a state in which the joined body is locally kept higher than the grain growth temperature, by making use of the temperature gradient at the junction or the corresponding concentration of the additive.

REFERENCES:
patent: 4339301 (1982-07-01), Matsuzawa et al.
patent: 4519870 (1985-05-01), Matsuzawa et al.
"Boundary Migration of Single Crystal in Polycrystalline Alumina"; Yugyo-Kyokai-Shi, vol. 82, [5], 1974, pp. 295-296.

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