Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – Multiple housings
Patent
1991-09-16
1993-04-13
James, Andrew J.
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
Multiple housings
257678, 257690, 257691, 361392, 361393, 361395, H01L 2328, H01L 2302, H05K 711, H05K 700
Patent
active
052025780
ABSTRACT:
One of a pair of the module type semiconductor devices, signal input terminals are located on the other side of current output terminals with respect to current input terminals, and that, in the other of a pair of the module type semiconductor devices, signal input terminals are mounted on the other side of current input terminals with respect to current output terminals. Distance of connections between element in the case of bridge connections may be shortened to the minimum. Since the signal input terminals may be located outside the bus bars, openings need not be made in the bus bar. Space or the bus bar's surface area may be effectively used, with the result that a decrease in commutating inductance is achieved.
REFERENCES:
patent: 4905069 (1990-02-01), Shigekane
patent: 4907068 (1990-03-01), Amann et al.
patent: 4970576 (1990-11-01), Neidig et al.
Conference Record of the 1989 IEEE Industry Applications Society Annual Meeting, Part II, pp. 1352-1355, San Diego, Calif., "300 Ampere, 1000 Volt Hermetic Darlington Transistor" by Merle Morozowich.
James Andrew J.
Jr. Carl Whitehead
Kabushiki Kaisha Toshiba
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