TFT-driven image sensor including a reduced-size capacitor struc

Details TFT-driven image sensor including a reduced-size capacitor struc TFT-driven image sensor including a reduced-size capacitor struc

1991-05-10

1993-04-13

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257294, 257306, 257435, 257443, 2502141, H01L 2714

Patent

active

052025756

ABSTRACT:
An image sensor comprising a photoelectric conversion element which includes a transparent electrode and a thin film transistor switching element which includes a drain electrode, wherein an additional capacitor is formed by extending a part of the drain electrode toward the photoelectric conversion element so that a line from the transparent electrode can be connected to the extended portion of the drain electrode and forming first and second metal layers below and above the extended portion of the drain electrode through insulating layers, respectively. This allows lower and upper additional capacitor portions to be formed between the first metal layer and the extended portion of the drain electrode and between the second metal layer and the extended portion of the drain electrode. Accordingly, the additional capacitor consisting of the lower and upper additional capacitor portions can be made small in surface area and large in capacitance, thereby effectively reducing the influence from field through.

REFERENCES:
patent: 4845375 (1989-07-01), Tsushima
patent: 5070236 (1991-12-01), Miyake
patent: 5075244 (1991-12-01), Sakai et al.

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