Semiconductor device including a memory cell and peripheral port

Details Semiconductor device including a memory cell and peripheral port Semiconductor device including a memory cell and peripheral port

1997-11-06

2000-08-08

Munson, Gene M.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257371, 257903, 257384, H01L 2711, H01L 27092

Patent

active

061005681

ABSTRACT:
A semiconductor device including a substrate (220) having a primary surface, a memory cell (202) provided on the substrate, the memory cell (202) including a P-channel transistor, the P-channel transistor having an N-type gate (72), and peripheral portion (204) provided on the substrate, the peripheral portion including a P-channel transistor , the P-channel transistor having a P-type gate (99). A method for forming the semiconductor device is also disclosed.

REFERENCES:
patent: 4524377 (1985-06-01), Eguchi
patent: 4553098 (1985-11-01), Yoh et al.
patent: 4785341 (1988-11-01), Ning et al.
patent: 4890141 (1989-12-01), Tang et al.
patent: 5055904 (1991-10-01), Minami et al.
patent: 5497021 (1996-03-01), Tada
patent: 5536962 (1996-07-01), Pfiester

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