Semiconductor device having enhanced gate capacitance by using b

Details Semiconductor device having enhanced gate capacitance by using b Semiconductor device having enhanced gate capacitance by using b

1998-07-16

2000-08-08

Crane, Sara

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257310, 257295, 257325, H01L 3119

Patent

active

061005584

ABSTRACT:
A method for fabricating a MOSFET device is provided. The method includes a step of forming a gate oxide including first and second gate oxide materials. The first gate oxide material has a higher dielectric constant than the second gate oxide material. The first gate oxide material is formed to be over source/drain extension regions of the device; and the second gate oxide material is formed over a channel region of the device. The first gate oxide material has a low dielectric constant and provides for mitigating gate fringing field effects. The second gate oxide material has a high dielectric constant and provides for forming a thick gate oxide over a channel region of the device. Controlled uniform growth of the second gate oxide material is facilitated because of the thickness thereof.

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