Method of forming a semiconductor image sensor and structure

Details Method of forming a semiconductor image sensor and structure Method of forming a semiconductor image sensor and structure

1997-11-14

2000-08-08

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257233, 257234, 438 73, H01L 2972

Patent

active

061005568

ABSTRACT:
An image sensor (10) has an image sensing element that includes an N-type conducting region (26) and a P-type pinned layer (37). The two regions form two P-N junctions at different depths that increase the efficiency of charge carrier collection at different frequencies of light. The conducting region (26) is formed by an angle implant that ensures that a portion of the conducting region (26) can function as a source of an MOS transistor (32).

REFERENCES:
patent: 4484210 (1984-11-01), Shiraki et al.
patent: 4831426 (1989-05-01), Kimata et al.
patent: 5191399 (1993-03-01), Maegawa et al.
patent: 5202907 (1993-04-01), Yonemoto
patent: 5306931 (1994-04-01), Stevens
patent: 5446297 (1995-08-01), Lee
patent: 5514887 (1996-05-01), Hokari
patent: 5585653 (1996-12-01), Nakashiba
patent: 5625210 (1997-04-01), Lee et al.
patent: 5668390 (1997-09-01), Morimoto
patent: 5698874 (1997-12-01), Hayashi
"VLSI Tehcnology", S.M. Sze, Bell Laboratories, Incorporated, McGraw-Hill Book Company, 1983.
"Solid-State Imaging with Charge-Coupled Devices", Albert J. P. Theuwissen, Philips Imaging Technology, Kluwer Academic Publishers, 1995, pp. 66-69.
B. C. Burkey et al., "The Pinned Photodiode for an Interline-Transfer CCD Image Sensor", IEDM-84, 1984, Section 2.3, pp. 28-31.

Affiliated with

Also associated with

Rating

Method of forming a semiconductor image sensor and structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a semiconductor image sensor and structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a semiconductor image sensor and structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1152563