Semiconductor device and method of manufacturing thereof

Details Semiconductor device and method of manufacturing thereof Semiconductor device and method of manufacturing thereof

1994-02-17

1995-03-21

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257376, 257399, 257375, 257519, 437 40, 437 63, H01L 2704, H01L 21265

Patent

active

053998952

ABSTRACT:
A LOCOS oxide film is provided in a main surface of a semiconductor substrate for isolating an element region from another element region. A channel cut layer formed of a P-type impurity is provided under the element region. A P.sup.+ impurity region having a concentration thicker than that of P-type impurity of channel cut layer is formed directly under a bird's beak portion of LOCOS oxide film in the main surface of semiconductor substrate. Therefore, an isolation breakdown voltage of an N-channel transistor region is increased.

REFERENCES:
patent: 5160996 (1992-11-01), Odanaka

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