Semiconductor device having bipolar transistor and MOS transisto

Details Semiconductor device having bipolar transistor and MOS transisto Semiconductor device having bipolar transistor and MOS transisto

1992-10-28

1995-03-21

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 52, 257197, 257 65, 257616, H01L 2702, H01L 29161

Patent

active

053998944

ABSTRACT:
A semiconductor device of the present invention includes a bipolar transistor and MOS transistors which are formed on the same semiconductor substrate. The bipolar transistor is heterojunction transistor having a hetero junction. The hetero-bipolar transistor is a bipolar transistor of double-hetero structure in which a material used for forming the base region thereof has a band gap narrower than a material used for forming the emitter and collector regions thereof.

REFERENCES:
patent: 4437171 (1984-03-01), Hudson et al.
patent: 4984200 (1991-01-01), Saitoo et al.
patent: 5041892 (1991-08-01), Yano et al.
patent: 5144398 (1992-09-01), Morishita
patent: 5198689 (1993-03-01), Fujioka
E. J. Prinz et al., "The Effect Of Base-Emitter Spacers And Strain-Dependent Densities Of States In Si.sub.1-x Ge.sub.x /Si Heterojunction Bipolar Transistors" Digest Of International Electron-Device Meeting, p. 639 1989.

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