Fabrication of nitride semiconductor light-emitting device

Details Fabrication of nitride semiconductor light-emitting device Fabrication of nitride semiconductor light-emitting device

1998-11-17

2000-08-08

Bowers, Charles

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438931, 438967, 117952, H01L 2100

Patent

active

061001066

ABSTRACT:
A process for producing a semiconductor light-emitting device, which comprises forming, on a substrate by crystal growth, a gallium nitride type compound semiconductor layer having a crystal face (0,0,0,1) which can be utilized as the end surface of an optical waveguide or as a cavity mirror surface.

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K. Domen et al., :Optical Gain for Wurtzite GaN with Anisotropic Strain in C Plane Appl. Phys. Lett., vol. 70, No. 8, Feb. 24, 1997,pp. 987-989.
A. Kimura et al., "Selective Growth of GaN with Lateral Growth by Metalorganic Vapor Phase Epitaxy", Kaioyoo Butsurigaku Kaigaku Jutsu Koenkai Yokoshu, Autumn No. 58, 2p-Q-13, 1997, pp. 265.
T. Tanaka et al., "Stimulated Emission from Rectangular Cross-Sectional GaN Optical Waveguides by Photo-Pumping and Stripe Design of Optical Waveguides Formed with a Selectively Grown GaInN/GaN Buried Heterosructure", Solid-State Electronics, vol. 41, No. 2, 1997, pp. 255-261.

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