Method of making field emission tips using physical vapor deposi

Details Method of making field emission tips using physical vapor deposi Method of making field emission tips using physical vapor deposi

1994-04-22

1995-03-21

Dang, Thi

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156655, 156656, 1566591, 156657, 20419215, 20419235, 445 50, 445 51, H01J 900

Patent

active

053992385

ABSTRACT:
A method of making sub-micron low work function field emission tips without using photolithography. The method includes physical vapor deposition of randomly located discrete nuclei to form a discontinuous etch mask. In one embodiment an etch is applied to low work function material covered by randomly located nuclei to form emission tips in the low work function material. In another embodiment an etch is applied to base material covered by randomly located nuclei to form tips in the base material which are then coated with low work function material to form emission tips. Diamond is the preferred low work function material.

REFERENCES:
patent: 2959704 (1960-11-01), Snell et al.
patent: 3625758 (1971-12-01), Stahl et al.
patent: 3894332 (1975-07-01), Nathanson et al.
patent: 3947716 (1976-03-01), Fraser, Jr. et al.
patent: 3970887 (1976-07-01), Smith et al.
patent: 3998678 (1976-12-01), Fukase et al.
patent: 4115228 (1978-09-01), Heinrich et al.
patent: 4139773 (1979-02-01), Swanson
patent: 4307507 (1981-12-01), Gray et al.
patent: 4350926 (1982-09-01), Shelton
patent: 4465551 (1984-08-01), Horwitz
patent: 4566937 (1986-01-01), Pitts
patent: 4612085 (1986-09-01), Jelks et al.
patent: 4663559 (1987-05-01), Christersen
patent: 4685996 (1987-08-01), Busta et al.
patent: 4764485 (1988-08-01), Loughran et al.
patent: 4806202 (1989-02-01), Tang et al.
patent: 4855636 (1989-08-01), Busta et al.
patent: 4895735 (1990-01-01), Cook
patent: 4933108 (1990-06-01), Soredal
patent: 4943343 (1990-07-01), Bardai et al.
patent: 4964946 (1990-10-01), Gray et al.
patent: 4968382 (1990-11-01), Jacobson et al.
patent: 4973378 (1990-11-01), Lee et al.
patent: 5019003 (1991-05-01), Chason
patent: 5035768 (1991-07-01), Mu et al.
patent: 5104684 (1992-04-01), Tao et al.
patent: 5129850 (1992-07-01), Kane et al.
patent: 5141460 (1992-08-01), Jaskie et al.
patent: 5147823 (1992-09-01), Ishibashi et al.
patent: 5156997 (1992-10-01), Kumar et al.
patent: 5180951 (1993-01-01), Dworsky et al.
patent: 5185178 (1993-02-01), Koskenmaki
patent: 5196102 (1993-05-01), Kumar
patent: 5220725 (1993-06-01), Chan et al.
patent: 5244538 (1993-09-01), Kumar
patent: 5290732 (1994-03-01), Kumar et al.
patent: 5312514 (1994-05-01), Kumar
Maissel and Glang, Handbook of Thin Film Technology, 1983 Reissue, McGraw-Hill, New York, NY.
Cade and Lee, "Vacuum Microelectronics", GEC J. Res. Inc., Marconi Rev., 7(3), 129(1990).
Horwitz, McPhedran and Beunan, "Interference and diffraction in globular metal films", Journal of the Optical Society of America, vol. 68, No. 8, Aug. 1978, pp. 1023-1031.
Horwitz, "A new vacuum-etched high-transmittance (antireflection)film", Applied Physics Letters vol. 36, No. 9, May 1, 1980, pp. 727-730.

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