Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-11-21
1993-11-09
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257369, 257377, 257476, 257 73, H01L 2702, H01L 2948, H01L 2904, H01L 2348
Patent
active
052605949
ABSTRACT:
A semiconductor device of the present invention capable of obtaining a proper output signal by absorbing an overshoot or an undershoot to reduce internal noises, comprises, a logical circuit portion including a transistor, a first diode disposed between a power line and an electrode of the logical circuit portion communicating with a power supply with its cathode being directed to the power line, and a second diode disposed between a ground line and an electrode of the logical circuit portion communicating with the ground with its anode being directed to the ground line. Another semiconductor device of the present invention includes a MOS transistor. An electrode portion of the device communicating with the power line and that of the device communicating with the ground line are formed by restricting impurity concentration of semiconductor portions in contact with the associated metal electrodes and have diode effect. A semiconductor integrated circuit of the present invention is formed by integration the above semiconductor devices with reduced internal noises.
REFERENCES:
patent: 4300152 (1981-11-01), Legselter
patent: 4513309 (1985-04-01), Cricchi
patent: 4920399 (1990-04-01), Hall
patent: 5061981 (1991-10-01), Hall
Nippon Steel Corporation
Prenty Mark V.
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