Semiconductor memory device with a reference potential generator

Details Semiconductor memory device with a reference potential generator Semiconductor memory device with a reference potential generator

1994-11-08

1995-11-21

Popek, Joseph A.

Static information storage and retrieval

Read/write circuit

Differential sensing

36518909, 36518513, G11C 702

Patent

active

054693977

ABSTRACT:
The memory cells connected to the word lines in the odd-numbered rows differ from the memory cells connected to the word lines in the even-numbered rows in characteristics. A dummy cell DMC1 has the same characteristics as those of the memory cells connected to the word lines in the odd-numbered rows, and a dummy cell DMC2 has the same characteristics as those of the memory cells connected to the word lines in the even-numbered rows. Because the dummy cell DMC1 is selected together with a word line in an odd-numbered row, and the dummy cell DMC2 is selected together with a word line in an even-numbered row, a suitable reference potential can be supplied in accordance with the selected memory cell. A sense amplifier compares the potential on the bit line to which the selected memory cell is connected with the potential supplied from the selected dummy cell. Therefore, the sense amplifier can sense the potential at the selected memory cell accurately.

REFERENCES:
patent: 4799196 (1989-01-01), Takemae
patent: 5258959 (1993-11-01), Dallabora et al.

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