Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Patent
1993-09-23
1995-11-21
Sikes, William L.
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
365203, 327309, 327534, H03K 508, G11C 700
Patent
active
054693870
ABSTRACT:
A circuit for a clamping an /RAS signal in a DRAM. The bit line pre-charge generator is activated after the set-up of the VBB voltage, so that /RAS signals may be supplied to the chip after the bit line pre-charge voltage (VBLP) has reached the desired level, thereby preventing malfunction of the sense amplifiers. The circuit includes: a VBB sensor for producing VBB set-up signal S1 when a back bias voltage VBB in the semiconductor memory device has reached a desired level; a power-up generator for producing a power-up signal S2 when power in the semiconductor memory device is set-up; a VBLP generator for generating a bit line pre-charge voltage VBLP; a VBLP controller for holding the VBLP voltage to a ground voltage level according to the S1 and S2 signals; a VBLP sensor for generating VBLP set-up signal S3 when the VBLP voltage has reached a desired level; a /RAS pass signal generator for producing a /RAS pass signal S4 according to the S3 and S2 signals; a NOR circuit for controlling the transmission of the /RAS signals according to the S 4 signal.
REFERENCES:
patent: 4933902 (1990-06-01), Yamada et al.
patent: 4964082 (1990-10-01), Sato
patent: 4985869 (1991-01-01), Miyamoto
patent: 5305270 (1994-04-01), Kim
Goldstar Electron Co. Ltd.
Loudermilk Alan R.
Nguyen Tiep H.
Sikes William L.
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