Plasma sputter etching system with reduced particle contaminatio

Details Plasma sputter etching system with reduced particle contaminatio Plasma sputter etching system with reduced particle contaminatio

1995-06-07

1996-12-31

Weisstuch, Aaron

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20429809, 20429832, C23C 1454

Patent

active

055890415

ABSTRACT:
A plasma processing system for sputter etching a substrate with reduced particle contamination comprises a plasma processing chamber having an interior surface which defines a processing space containing a substrate. An electrical element couples electrical energy into a portion of the processing space to generate a plasma therein for etching the substrate. A heating device is coupled to the reactor and is operable for controllably heating the processing chamber interior surface to a selected temperature. The heating device is controlled by a temperature control circuit which turns the heating device to an ON state and operates the heating device to heat the processing chamber to a selected temperature when the electrical element is not coupling energy to the processing chamber and the plasma is extinguished. The selected temperature achieved by the heating device is related to the temperature of the processing chamber during plasma generation such that the interior surface is maintained at a relatively constant temperature before, during and after processing to prevent flaking of sputter material from the interior surface and generation of contamination particles within the processing space.

REFERENCES:
patent: 4933063 (1990-06-01), Katsura et al.
patent: 5254171 (1993-10-01), Hayakawa
patent: 5264488 (1994-11-01), Minato et al.
Honda Masao, "Processing Device".
Patent Abstracts of Japan; JP62115708; Publication Date 27 May 1987; vol. 11, No. 329.
Serizawa Masayoshi et al., "Plasma Processing Apparatus".
Patent Abstracts of Japan; JP62012129; Publication Date 21 Jan. 1987; vol. 11, No. 179.

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