Semiconductor device having improved electrode pad structure

Details Semiconductor device having improved electrode pad structure Semiconductor device having improved electrode pad structure

1991-01-25

1991-10-22

Hille, Rolf

357 67, H01L 2354

Patent

active

050600516

ABSTRACT:
In a semiconductor device in which copper or copper alloy bonding wire is bonded to an electrode pad on a semiconductor element, the electrode pad is formed of a first metal layer ohmically contacting the semiconductor element, a second metal layer hard enough not to be deformed at wire bonding step, and a third metal layer for bonding a copper wire, to suppress variation in the electric characteristics of a bonding portion and the production of stain in the semiconductor element at wire bonding step.

REFERENCES:
patent: 4176443 (1979-12-01), Iannuzz et al.
patent: 4720908 (1988-01-01), Wills
patent: 4724475 (1988-02-01), Matsuda
"Electronigration Improvement of AL-Cu or Au Conductors", Howard-IBM Technical Disclosure Bulletin vol. 21, No. 12, May 1979.

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