Method for forming a photoelectric deposited film

Details Method for forming a photoelectric deposited film Method for forming a photoelectric deposited film

1994-11-02

1995-11-21

King, Roy V.

Coating processes

Direct application of electrical, magnetic, wave, or...

Plasma

427574, 427578, 4272555, 136243, 437 4, B05D 306, H01L 3100

Patent

active

054685214

ABSTRACT:
A deposited film forming method includes the steps of: continuously carrying a long substrate into or out of a vacuum chamber, flowing a first deposited film forming gas in a reverse direction parallel to the substrate and opposite to a conveying direction of the substrate from first gas discharging means into the vacuum chamber, exhausting the gas from first gas exhausting means, flowing a second deposited film forming gas in a forward direction parallel to the substrate and equivalent to the conveying direction of the substrate, exhausting the gas through the second gas exhausting means, and applying a discharge energy to the first and second gases.

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patent: 4664951 (1987-05-01), Dochler
patent: 4763601 (1988-08-01), Saida et al.
patent: 4920917 (1990-05-01), Nakatani et al.
patent: 4951602 (1990-08-01), Kanai
patent: 5180434 (1993-01-01), DiDio et al.
S. Guha et al., "A Novel Design for Amorphous Silicon Solar Cells," 20th IEEE Photovoltaic Specialists Conference--1988, vol. 1, pp. 78-84.

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