Method of forming quantum wire for compound semiconductor

Details Method of forming quantum wire for compound semiconductor Method of forming quantum wire for compound semiconductor

Filed on

1997-12-09

Date issued

1999-08-10

Examiner

Bowers, Charles

Patent Class

Semiconductor device manufacturing: process

SubClass

Formation of semiconductive active region on any substrate

Other Related Categories

438500, 438507, 438962, H01L 2120

Type

Patent

Status

active

Patent number

059373130

Description

ABSTRACT:
Disclosed is a method of forming quantum wires for compound semiconductors capable of forming a large number of quantum wires. Quantum wires for compound semiconductors according to the present invention are formed by the following processes. First, a compound semiconductor substrate is provided and Al.sub.X Ga.sub.1-X As layers and GaAs layers are then formed alternately on the substrate to predetermined times to form a quantum well. Next, a plurality of grooves are formed in the upper most GaAs layer to a predetermined depth wherein the grooves are separated with a predetermined space from each other. Stress is applied to the quantum well such that the Al.sub.X Ga.sub.1-X As layers surround the GaAs layers to thereby form a large number of quantum wires.

REFERENCES:
patent: 5548129 (1996-08-01), Kubena
K. Boer, Survey of Semiconductor Physics, Van Nostrand Reinhold, p. 448 (no month given), 1990.

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