Method of making a dual gate trench thin film transistor

Details Method of making a dual gate trench thin film transistor Method of making a dual gate trench thin film transistor

1997-11-19

1999-08-10

Monin, Jr., Donald L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438151, 438157, 438270, 257 64, 257 66, 257329, 257332, H01L 2170

Patent

active

059372834

ABSTRACT:
A thin film transistor and a method for fabricating the same in which a self alignment method is used to form an offset area and source and drain electrodes are disclosed, the TFT including a substrate; a trench formed in the substrate,; an active layer fromed on the substrate and on the trench; a gate insulating film formed on the active layer; a gate electrode formed on the gate insulating film on at least one side of the trench; a source region formed in the active layer on a bottom side of the trench; and drain regions formed in the active layer on the substrate to be isolated form the gate electrode.

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Shuji Idea et al., "International Electron Devices Meeting"; Dec. 9-12, 1990; A Polysilicon Transistor Technology for Large Capacity SRAMs; pp. 18.1.1-18.1.4.

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