Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Patent
1997-07-11
1999-08-10
Niebling, John F.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
438487, 438151, M01C 2100, M01C 2120
Patent
active
059372826
ABSTRACT:
In producing a thin film transistor, after an amorphous silicon film is formed on a substrate, a nickel silicide layer is formed by spin coating with a solution (nickel acetate solution) containing nickel as the metal element which accelerates (promotes) the crystallization of silicon and by heat treating. The nickel silicide layer is selectively patterned to form island-like nickel silicide layer. The amorphous silicon film is patterned. A laser light is irradiated while moving the laser, so that crystal growth occurs from the region in which the nickel silicide layer is formed and a region equivalent to a single crystal (a monodomain region) is obtained.
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Kusumoto Naoto
Nakajima Setsuo
Teramoto Satoshi
Yamazaki Shunpei
Ferguson Jr. Gerald J.
Lebentritt Michael S.
Niebling John F.
Semiconductor Energy Laboratory Co,. Ltd.
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