Structure of thin film transistor and gate terminal having a cap

Details Structure of thin film transistor and gate terminal having a cap Structure of thin film transistor and gate terminal having a cap

1997-06-17

1999-08-10

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257 59, 257 72, 257296, 257298, 257300, 257347, 257458, 349 44, 349 46, 349 54, 349110, 349111, 349147, H01L 2978

Patent

active

059362928

ABSTRACT:
A thin film transistor of an active matrix liquid crystal display unit has a gate electrode continued to a gate terminal supplied with a gate control signal, a gate insulating layer formed beneath the gate electrode and the gate terminal, source and drain electrodes formed between the gate insulating layer and an insulating layer and an amorphous silicon layer extending on the insulating layer between the source and drain electrodes, and a silicide layer is inserted between the insulating layer and the gate insulating layer so as to enhance the adhesion therebetween.

REFERENCES:
patent: 4760034 (1988-07-01), Barden
patent: 5162933 (1992-11-01), Kakuda et al.

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