Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1997-05-06
1999-02-02
Picardat, Kevin M.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438106, 438118, 438126, 438615, H01L 2144
Patent
active
058664750
ABSTRACT:
An Al electrode pad and a photoresist pattern having an opening portion on the Al electrode pad on a semiconductor substrate on which a surface protective film has been formed are formed. Then, a barrier metal layer is formed on the whole substrate surface, and a resist film and the barrier metal layer on the resist film are removed by lift-off, thus forming a solder bump foundation layer. Furthermore, an adhesive tape is stuck to the substrate surface and then the adhesive tape is peeled off, thereby to perform a residue removing process for removing resist film residues and useless barrier metal residues other than the solder bump foundation layer. With this, it is possible to further remove residues that have remained on the substrate surface without being lifted off and caused a defective device with an adhesive tape, thus making it possible to form a solder bump of high reliability in flip chip bonding. In this way, there is provided a method of forming such a solder bump that is capable of flip chip bonding on a semiconductor device with high reliability.
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Collins Deven
Picardat Kevin M.
Sony Corporation
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