Semiconductor device having a plurality of circuits driven by di

Details Semiconductor device having a plurality of circuits driven by di Semiconductor device having a plurality of circuits driven by di

1994-08-09

1998-08-18

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257368, 257369, H01L 2362

Patent

active

057961476

ABSTRACT:
A semiconductor device has a semiconductor substrate including at least a first well and a second well which is electrically divided each other; a first electric circuit formed in the first well and connected to a first circuit power source through a source terminal; a second electric circuit formed in the second well and connected to a second circuit power source through a source terminal; a substrate ground well formed on the semiconductor substrate and connected to a third circuit power source which outputs a stable reference potential; a first protection diode connected between the source terminal of the first power source and the substrate ground well in the manner of being a reverse bias direction; and a second protection diode connected between the source terminal of the second power source and the substrate ground well in the manner of being a reverse direction.

REFERENCES:
1989 IEEE International Solid-State Circuits Conference, by Fujii et al., pp. 248-249, Dec. 1989.

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